MS1006 Bipolar RF Transistors_Taoxin Chuangke HK_integrated circuit ic_relay_electronic components _connector_transformer_discrete semiconductor_PCBA_development board_core board

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MS1006

Bipolar RF Transistors

RF TRANS NPN 55V 30MHZ M135

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MS1006

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MS1006

Bipolar RF Transistors

RF TRANS NPN 55

Bipolar RF Transistors

Bulk

Product parameters

TYPE	DESCRIPTION
Mfr	Microsemi Corporation
Series	-
Package	Bulk
Product Status	OBSOLETE
Package / Case	M135
Mounting Type	Stud Mount
Transistor Type	NPN
Operating Temperature	200°C
Gain	14dB
Power - Max	127W
Current - Collector (Ic) (Max)	3.25A
Voltage - Collector Emitter Breakdown (Max)	55V
DC Current Gain (hFE) (Min) @ Ic, Vce	19 @ 1.4A, 6V
Frequency - Transition	30MHz
Supplier Device Package	M135

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