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  • image of Single FETs, MOSFETs>IMBG65R015M2HXTMA1
  • image of Single FETs, MOSFETs>IMBG65R015M2HXTMA1
Part number
Product classification
Manufacturer
Type
Encapsulation
Packing
Quantity
RoHS status
IMBG65R015M2HXTMA1
Single FETs, MOSFETs
IR (Infineon Technologies)
SILICON CARBIDE MOSFET
-
Tape & Reel (TR)
0
Price:
$12.9420
Total number

Quantity

Price

Total price

1

$19.2150

$19.2150

10

$17.7210

$177.2100

25

$16.9290

$423.2250

100

$15.1380

$1,513.8000

250

$14.4360

$3,609.0000

500

$13.7430

$6,871.5000

1000

$12.9420

$12,942.0000

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product details
image of Single FETs, MOSFETs>IMBG65R015M2HXTMA1
IMBG65R015M2HXTMA1
Part number
Product classification
Manufacturer
Type
Encapsulation
Packing
Quantity
RoHS status
Specification sheet
IMBG65R015M2HXTMA1
Single FETs, MOSFETs
IR (Infineon Technologies)
SILICON CARBIDE
Single FETs, MOSFETs
Tape & Reel (TR)
1
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrIR (Infineon Technologies)
SeriesCoolSiC™ Gen 2
PackageTape & Reel (TR)
Product StatusACTIVE
Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C115A (Tc)
Rds On (Max) @ Id, Vgs18mOhm @ 64.2A, 18V
Power Dissipation (Max)416W (Tc)
Vgs(th) (Max) @ Id5.6V @ 13mA
Supplier Device PackagePG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On)15V, 20V
Vgs (Max)+23V, -7V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds2792 pF @ 400 V
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