CAS530M12BM3 FET, MOSFET Arrays_Taoxin Chuangke HK_integrated circuit ic_relay_electronic components _connector_transformer_discrete semiconductor_PCBA_development board_core board

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CAS530M12BM3

FET, MOSFET Arrays

SIC 2N-CH 1200V 630A

Box

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$852.9300

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$852.9300

$823.1760

$8,231.7600

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CAS530M12BM3

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CAS530M12BM3

FET, MOSFET Arrays

SIC 2N-CH 1200V

FET, MOSFET Arrays

Box

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TYPE	DESCRIPTION
Mfr	Wolfspeed
Series	-
Package	Box
Product Status	ACTIVE
Package / Case	Module
Mounting Type	Chassis Mount
Configuration	2 N-Channel (Dual) Common Source
Operating Temperature	-40°C ~ 150°C (TJ)
Technology	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	630A (Tc)
Input Capacitance (Ciss) (Max) @ Vds	38900pF @ 800V
Rds On (Max) @ Id, Vgs	3.47mOhm @ 530A, 15V
Gate Charge (Qg) (Max) @ Vgs	1362nC @ 15V
Vgs(th) (Max) @ Id	3.6V @ 127mA

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